Aluminum base material, metal substrate having insulating layer employing the aluminum base material, semiconductor element, and solar battery
AssigneeFUJIFILM Corporation
InventorsShigenori Yuuya, Ryouzou Kaito, Hirokazu Sawada
Life of this patent
Estimating the term…
Abstract
A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix.
Claims11
An Al base material to be utilized in a method for forming a metal substrate with an insulating layer for a semiconductor element, by performing anodic oxidation on at least one surface thereof, characterized by:
- precipitous particles of only a substance which is capable of being anodized by anodic oxidation being included as precipitous particles within an Al matrix.
A method for producing an Al base material, comprising the steps of:
- preparing the Al base material;
- administering melt treatment on the Al base material to obtain an Al ingot;
- isothermally heating the Al ingot at a temperature less than the cocrystallization temperature of Si—Al;
- cooling the Al ingot to a temperature at which rolling is possible;
- rolling the Al ingot;
- administering a heating process on the rolled Al at the temperature less than the cocrystallization temperature;
- cold rolling the heat treated Al base material, to obtain an Al substrate;
- and
- administering anodic oxidation onto the Al substrate from the side of at least one of the surfaces thereof.
Dependencies are inferred from the claim text.