Photovoltaic device with a metal sulfide oxide window layer
AssigneeFirst Solar, Inc.
InventorsRui Shao, Markus Gloeckler, Benyamin Buller
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Abstract
Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.
Claims28
A photovoltaic device comprising:
- a substrate;
- a MS1-xOx window layer formed over the substrate, wherein M is Zn;
- and
- an absorber layer formed over the substrate.
A photovoltaic device comprising:
- a substrate;
- a MS1-xOx window layer formed over the substrate, wherein M is Sn;
- and
- an absorber layer formed over the substrate.
A photovoltaic device comprising:
- a substrate;
- a MS1-xOx window layer formed over the substrate, wherein M is In;
- and
- an absorber layer formed over the substrate.
A process for manufacturing a photovoltaic device comprising:
- forming a MS1-xOx window layer over a substrate, wherein M is one of Zn, Sn and In;
- and
- forming an absorber layer over the substrate.
A photovoltaic device comprising:
- a substrate;
- a MS1-xOx window layer formed over the substrate by at least one of a sputtering process, evaporation deposition process, CVD process, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In;
- and
- an absorber layer formed on the substrate, wherein the absorber layer is formed from one of CdTe, CIGS, and amorphous Si.
Dependencies are inferred from the claim text.