CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
OwnerChungho Lee, Zhibo Zhao +2inventors
InventorsChungho Lee, Zhibo Zhao, Benyamin Buller, Rui Shao
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Abstract
A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.
Claims33
A structure for use in a photovoltaic device, the structure comprising:
- a substrate;
- a buffer material, wherein the buffer material comprises at least one of CdZnO and SnZnO.
- a barrier material in contact with the substrate;
- and
- a transparent conductive oxide between the buffer material and the barrier material.
A photovoltaic device comprising:
- a substrate;
- a semiconductor material;
- a barrier material between the substrate and the semiconductor material;
- a transparent conductive oxide between the barrier material and the semiconductor material;
- a buffer material between the transparent conductive oxide and the semiconductor material, wherein the buffer material comprises at least one of CdZnO and SnZnO;
- and
- a window material between the buffer material and the semiconductor material.
A method of making a photovoltaic structure, the method comprising:
- providing a substrate;
- forming a barrier material on a first side of the substrate;
- forming a transparent conductive oxide on the first side of the substrate;
- and
- forming a buffer material on the first side of the substrate, wherein the buffer material comprises at least one of CdZnO and SnZnO;
- and wherein the barrier material is between the transparent conductive oxide and the substrate;
- and the transparent conductive oxide is between the buffer material and the barrier material.
Dependencies are inferred from the claim text.