Photovoltaic device containing an n-type dopant source
AssigneeFirst Solar, Inc.
InventorMarkus Gloeckler
Life of this patent
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Abstract
Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.
Claims25
A photovoltaic device comprising:
- a light-penetrable support layer;
- a buffer layer containing a n-type dopant;
- a transparent conductive oxide provided between the support layer and the buffer layer;
- an absorbent layer;
- and
- a window layer provided between the absorbent layer and the buffer layer.
A photovoltaic device comprising:
- a light-penetrable support layer;
- a buffer layer containing a n-type dopant of a first concentration;
- a transparent conductive oxide provided between the support layer and the buffer layer;
- an absorbent layer;
- and
- a window layer provided between the absorbent layer and the buffer layer, the window layer containing the n-type dopant of a second concentration.
A method of forming a photovoltaic device comprising the steps of:
- providing a light-penetrable support layer;
- forming a transparent conductive oxide over the support layer;
- forming a buffer layer over the transparent conductive oxide;
- doping the buffer layer with a n-type dopant at a first concentration;
- forming a window layer over the buffer layer, the n-type dopant diffusing from the buffer layer into the window layer during thermal processing;
- and
- forming an absorbent layer over the window layer.
Dependencies are inferred from the claim text.