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US 2012/0067283 A1Published application
Systems and Methods for Forming Metal Oxide Layers
AssigneeMicron Technology, Inc.
InventorsBrian A. Vaartstra, Timothy A. Quick
Life of this patent
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Abstract
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Claims15
1-31. (canceled)
An atomic layer vapor deposition apparatus comprising:
- a deposition chamber having a substrate positioned therein;
- one or more vessels comprising at least one precursor compound of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- and
- one or more sources of ozone.
6 more elements
33-41. (canceled)
An atomic layer vapor deposition system comprising:
- one or more vessels comprising at least one precursor compound of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- and
- one or more sources of ozone.
5 more elements
48-53. (canceled)
Dependencies are inferred from the claim text.