Surface wave plasma cvd apparatus and film forming method
AssigneeShimadzu Corporation
InventorMasayasu Suzuki
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Abstract
A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation.
Claims21
A surface wave plasma CVD apparatus comprising:
- a waveguide that is formed of a plurality of slot antennae and connected to a microwave source;
- a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma;
- a moving device that reciprocates a subject of film formation in the form of a substrate such that the subject of film formation passes a film formation processing region facing the dielectric member;
- and
- a control device that controls reciprocation of the subject of film formation by the moving device depending on film formation conditions to perform film formation on the subject of film formation.
Dependencies are inferred from the claim text.