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US 2012/0067275 A1Published application
Compound semiconductor device including ain layer of controlled skewness
AssigneesHitachi Cable, Ltd., Fujitsu Limited
InventorsKenji Imanishi, Toshihide Kikkawa, Takeshi Tanaka, Yoshihiko Moriya, Yohei Otoki
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Abstract
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Claims2
A manufacture method for a semiconductor epitaxial substrate comprising:
- epitaxially growing an AlN layer on a single crystal substrate;
- and
- epitaxially growing a nitride semiconductor layer on said AlN layer,
- wherein growth conditions for said AlN layer are set in such a manner that a skewness Rsk of an upper surface of said AlN layer is positive.
1 more element
Dependencies are inferred from the claim text.