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AssigneeCovalent Materials Corporation
InventorsHironori Banba, Hiromichi Isogai, Yoshiaki Abe, Takashi Ishikawa, Shingo Narimatsu, Jun Nakao, Hiroyuki Abiko, Michihiro Ohwa
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According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.
A single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method by bringing seed crystals into contact with a molten silicon liquid in a crucible and by growing a neck portion where an enlarged diameter portion and a reduced diameter portion are formed alternately, the apparatus comprising:
A single crystal pulling-up method of pulling-up silicon single crystals by a Czochralski method by bringing seed crystals into contact with a molten silicon liquid in a crucible and by growing a neck portion where an enlarged diameter portion and a reduced diameter portion are formed alternately, the method comprising:
Dependencies are inferred from the claim text.