Asymmetrical bidirectional protection component
AssigneeSTMicroelectronics (Tours) SAS
InventorBenjamin Morillon
Life of this patent
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Abstract
An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first to area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.
Claims8
An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, comprising:
- a first implanted area of the first conductivity type;
- a first epitaxial layer of the second conductivity type on the substrate and the first implanted area;
- a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer;
- a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first area;
- a first metallization covering the entire lower surface of the substrate;
- and
- a second metallization covering the second area.
A method of manufacturing an asymmetrical bidirectional protection component in a semiconductor substrate of a first conductivity type, comprising:
- implanting a dopant of the first conductivity type in a first area;
- forming by epitaxy a first layer of the second conductivity type on the substrate and the first implanted area;
- forming by epitaxy a second layer of the second conductivity type on the first layer, the second layer having a doping level different from that of the first layer;
- implanting a dopant of the first conductivity type in a second area on the outer surface of the second layer, opposite to the first area;
- covering the entire lower surface of the substrate with a first metallization;
- and
- covering the second area with a second metallization.
Dependencies are inferred from the claim text.