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US 2012/0058712 A1Published application
Polishing pads for chemical mechanical planarization and/or other polishing methods
AssigneeNovaplanar Technology, Inc.
InventorMichael R. Oliver
Life of this patent
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Abstract
Embodiments herein provide polishing pads that produce high post-polish planarity, such as on a wafer substrate or other substrates. Exemplary pads include a bulk matrix and embedded polymer particles. Pads according to embodiments herein may be used to remove material over a composite substrate, comprised of two or more different materials, or a substrate comprised of a single material.
Claims18
A polishing pad, comprising:
- a matrix comprising a siloxane polymer having a storage modulus of about 1×105 Pa to about 1×107 Pa, a loss modulus of about 1×104 Pa to about 1×106 Pa, and a loss factor, tan (δ), of at least 0.05;
- and
- a plurality of polymer particles embedded within the matrix, the polymer particles having a different chemical composition from that of the matrix.
A polishing pad, comprising:
- a matrix comprising a material having a storage modulus of about 1×105 Pa to about 1×107 Pa and a loss modulus of about 1×104 Pa to about 1×106 Pa;
- and
- a plurality of polymer particles embedded within the matrix during polishing and having a mean particle diameter of approximately 10 to 100 μm,
- wherein the matrix has a surface energy of approximately 15-25 mN/m and the particles have a surface energy of approximately 40-60 mN/m.
1 more element
A method of polishing a surface of a substrate, comprising:
- providing a substrate;
- and
- contacting the substrate with a polishing pad, whereby the polishing pad and/or the substrate are moved relative to the other of the polishing pad and the substrate while in contact, the polishing pad comprising:
- a matrix comprising a material having a storage modulus of about 1×105 Pa to about 1×107 Pa and a loss modulus of about 1×104 Pa to about 1×106 Pa;
- and
- polymer particles embedded within the matrix during polishing, the polymer particles having a mean particle diameter of approximately 10 to 100 μm, wherein the polymer particles provide the loci of polishing.
3 more elements
Dependencies are inferred from the claim text.