Polishing apparatus and method

A substrate holding apparatus for holding a substrate and pressing the substrate against a polishing surface, comprising:

• an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate;
• a carrier provided above said elastic membrane;
• at least one pressure chamber formed between said elastic membrane and said carrier;
• and
• an infrared light detector configured to measure thermal energy from said elastic membrane;
• wherein surface roughing processing is applied to a rear surface side of said substrate holding surface of said elastic membrane.

A substrate holding apparatus for holding a substrate and pressing the substrate against a polishing surface, comprising:

• an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate;
• a carrier provided above said elastic membrane;
• at least one pressure chamber formed between said elastic membrane and said carrier;
• an infrared light detector configured to measure thermal energy from said elastic membrane;
• and
• a measuring instrument disposed at a rear surface side of said substrate holding surface of said elastic membrane and configured to measure thermal energy of a portion other than said elastic membrane.

A polishing apparatus comprising:

• a polishing table having a polishing surface;
• and
• a substrate holding apparatus for holding a substrate and pressing the substrate against a polishing surface, comprising:
• an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate;
• a carrier provided above said elastic membrane;
• at least one pressure chamber formed between said elastic membrane and said carrier;
• and
• an infrared light detector configured to measure thermal energy from said elastic membrane;
• wherein surface roughing processing is applied to a rear surface side of said substrate holding surface of said elastic membrane.

A polishing apparatus comprising:

• a polishing table having a polishing surface;
• and
• a substrate holding apparatus for holding a substrate and pressing the substrate against a polishing surface, comprising:
• an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate;
• a carrier provided above said elastic membrane;
• at least one pressure chamber formed between said elastic membrane and said carrier;
• an infrared light detector configured to measure thermal energy from said elastic membrane;
• and
• a measuring instrument disposed at a rear surface side of said substrate holding surface of said elastic membrane and configured to measure thermal energy of a portion other than said elastic membrane.

A polishing apparatus for polishing a substrate, comprising:

• a polishing table having a polishing surface;
• a substrate holding apparatus configured to hold the substrate and to press the substrate against said polishing surface, said substrate holding apparatus comprising:
• an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate;
• a carrier provided above said elastic membrane;
• at least one pressure chamber formed between said elastic membrane and said carrier;
• and
• a first passage communicating with said pressure chamber;
• wherein said first passage is connected only to a gas source isolated from an atmosphere in which the polishing apparatus is placed.

A polishing apparatus for polishing a substrate, comprising:

• a polishing table having a polishing surface;
• a substrate holding apparatus configured to hold the substrate and to press the substrate against said polishing surface, said substrate holding apparatus comprising:
• an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate;
• a carrier provided above said elastic membrane;
• at least one pressure chamber formed between said elastic membrane and said carrier;
• and
• a first passage communicating with said pressure chamber;
• wherein only a gas whose dew-point temperature is not more than 20° C., under an atmospheric pressure is supplied to said pressure chamber.