Oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices

A method of fabricating a semiconductor device, the method comprising:

• forming an oxidation-promoting agent layer comprising an oxidation-promoting agent represented by Formula 1 on a surface of a semiconductor substrate;
• A-M-L (1)
• wherein L is a functional group that is capable of being chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is an oxidizing functional group, and M is a thermally decomposable moiety that allows A and L to be covalently bonded to each other;
• forming a spin-on-glass (SOG) material layer on the oxidation-promoting agent layer;
• soft-baking the SOG material layer and the oxidation-promoting agent layer;
• and
• annealing the oxidation-promoting agent layer and the SOG material layer to form an oxide layer.