Method of forming semiconductor device and semiconductor device

A method of forming a semiconductor device, comprising:

• dipping a silicon surface of a silicon substrate in a solution and forming a silicon oxide film on the silicon substrate;
• annealing the silicon oxide film at a temperature in an oxidation ambient, wherein the temperature is 650° C. or more and wherein the oxidation ambient comprises oxygen, water vapor, and either helium or neon, and the sum of the oxygen and water vapor partial pressures in the ambient is not more than 133×1011.7030-18114/T Pa, wherein T is expressed in Kelvin;
• and
• forming a high dielectric insulation film on the silicon oxide film, wherein the high dielectric insulation film has a dielectric constant greater than that of the silicon oxide film, and the high dielectric insulation film and the silicon oxide film form a gate insulation layer.