Resist stripping compositions and methods for manufacturing electrical devices

A liquid composition, comprising:

• (A) from 40 to 99.95% by weight of at least one polar organic solvent selected from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amino-1-propanol, 5-amino-1-pentanol, and dimethyl sulfoxide;
• (B) from 0.05 to less than 0.5% by weight of at least one quaternary ammonium hydroxide;
• (C) less than 5% by weight of water;
• and
• (D) a polar organic solvent selected from the group consisting of ethanolamine, N-methylethanolamine, N-ethylethanolamine, isopropanolamine, 2-(2-aminoethylamino)ethanol, 2-(2-aminoethoxy)ethanol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, N-(2-hydroxyethyl)piperidine, 1,3-dimethyl-3,4,5,6-tetrahydro-2-(1H)-pyrimidinone, and N-(3-aminopropyl)imidazole,
• wherein
• all weight percentages are based on the complete weight of the composition, wherein
• the composition is free from N-alkylpyrrolidones, hydroxyl amines, and hydroxyl amine derivatives, and
• the composition has a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry.

A method for preparing the liquid composition of claim 1, the method comprising:

• (I) selecting at least one of the polar organic solvent (A) selected from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amino-1-propanol, 5-amino-1-pentanol, and dimethyl sulfoxide;
• (II) selecting at least one of the polar organic solvent (D), which is different from the polar organic solvent (A) selected in (I), selected from the group consisting of ethanolamine, N-methylethanolamine, N-ethylethanolamine, isopropanolamine, 2-(2-aminoethylamino)ethanol, 2-(2-aminoethoxy)ethanol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, N-(2-hydroxyethyl)piperidine, 1,3-dimethyl-3,4,5,6-tetrahydro-2-(1H)-pyrimidinone, and N-(3-aminopropyl)imidazole;
• (III) mixing, based on the complete weight of the resulting mixture:
• (a) from 40 to 99.95% by weight of the at least one of the polar organic solvent (A) selected in (I) and the at least one polar organic solvent (D) selected in (II);
• (b) from 0.05 to less than 0.5% by weight of the at least one of the quaternary ammonium hydroxide (B);
• (c) less than 5% by weight of the water;
• and
• (d) at least one of the polar organic solvent (A) selected in (I) and at least one of the polar organic solvent (D) selected in (II),
• in the absence of N-alklpyrrolidones, hydroxyl amines, and hydroxyl amine derivatives;
• and
• (IV) adjusting the dynamic shear viscosity at 50° C. of the mixture resulting from the mixing (III) to 1 to 10 mPas, as measured by rotational viscometry.

A method for manufacturing an electrical device, the method comprising:

• (1) applying an insulating dielectric layer, consisting of at least one low-k or ultra-low-k material, on top of a substrate;
• (2) applying a positive or a negative resist layer on top of the insulating dielectric layer (1);
• (3) selectively exposing the resist layer (2) to electromagnetic radiation or corpuscular radiation;
• (4) developing the selectively exposed resist layer (3) to form a resist pattern;
• (5) dry-etching the insulating dielectric layer (1) using the resist pattern (4) as a mask to form wire trenches, via holes, or both, communicating with a substrate surface;
• (6) selecting at least one of the polar organic solvent (A) exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution, a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer comprising at least one deep UV absorbing chromophoric group;
• (7) removing the resist pattern (4) and post-etch residues with at least one resist stripping composition by an all-wet process;
• and
• (8) filling the wire trenches (5), via holes (5), or both, with at least one material having a low electrical resistivity,
• wherein the at least one resist stripping composition (7) is free from N-alkylpyrrolidones, hydroxyl amines, and hydroxyl amine derivatives, has a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry, and comprises
• (A) from 40 to 99.95 of at least one of the polar organic solvent (A) selected in (6),
• (B) from 0.05 to less than 0.5% by weight of at least one quaternary ammonium hydroxide (B), and
• (C) less than 5% by weight of water,
• based on the complete weight of the composition.

A method of manufacture, comprising removing negative-tone and positive-tone photoresists and post-etch residues by way of patterning Through Silicon Vias, plating and bumping, or both, with a liquid composition,

• wherein
• the liquid composition is free from N-alkylpyrrolidones, hydroxyl amines, and hydroxyl amine derivatives,
• the liquid composition has a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry, and
• the liquid composition comprises, based on the complete weight of the composition:
• (A) from 40 to 99.95% by weight of at least one polar organic solvent selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of a respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer comprising deep UV absorbing chromophoric groups;
• (B) from 0.05 to less than 0.5% by weight of at least one quaternary ammonium hydroxide;
• and
• (C) less than 5% by weight of water.