Semiconductor devices and methods of fabricating the same
OwnerJae-Hwang SIM, Jong-Min LEE +1inventors
InventorsJae-Hwang SIM, Jong-Min LEE, Hojun SEONG
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Abstract
A method of forming a nonvolatile memory device includes providing conductive pillars disposed in a first insulating layer and disposed on a semiconductor substrate, providing an etch stop layer on the first insulating layer, disposing a mold layer on the etch stop layer, and forming grooves in the mold layer. The grooves respectively extend over the conductive pillars in a first direction. The method further includes patterning the etch stop layer using the grooves to form holes respectively corresponding to the conductive pillars, and filling a metal into the grooves and the holes. The metal in the holes contacts the conductive pillars.
Claims17
A method of forming a nonvolatile memory device, the method comprising:
- providing conductive pillars disposed in a first insulating layer and disposed on a semiconductor substrate;
- providing an etch stop layer on the first insulating layer;
- disposing a mold layer on the etch stop layer;
- forming grooves in the mold layer, the grooves respectively extending over the conductive pillars in a first direction;
- patterning the etch stop layer using the grooves to form holes respectively corresponding to the conductive pillars;
- and
- filling a metal into the grooves and the holes, the metal in the holes contacting the conductive pillars.
A method of forming a nonvolatile memory device, the method comprising:
- providing conductive pillars disposed in a first insulating layer and disposed on a semiconductor substrate;
- providing an etch stop layer on the first insulating layer, the etch stop layer having holes;
- disposing a mold layer on the etch stop layer;
- forming grooves in the mold layer, the grooves respectively extending over the conductive pillars in a first direction;
- patterning the mold layer in the holes using the grooves to form openings respectively corresponding to the conductive pillars;
- and
- filling a metal into the grooves and the openings, the metal in the openings contacting the conductive pillars.
17-33. (canceled)
Dependencies are inferred from the claim text.