Semiconductor device manufacturing method
AssigneeElpida Memory, Inc.
InventorToshiyuki HIROTA
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect and a space thereon within the first interconnect trench, and a second interconnect and a space thereon within the second interconnect trench; forming a first trench larger in width from the first interconnect trench and a second trench larger in width from the second interconnect trench, by conducting isotropic-etching; and forming a first insulating film within the first trench and a second insulating film within the second trench by filling an insulating material in the first trench and the second trench.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a first interconnect trench and a second interconnect trench adjacent to the first interconnect trench in an interlayer insulating film;
- providing a first interconnect and a space on the first interconnect within said first interconnect trench, and a second interconnect and a space on the second interconnect within said second interconnect trench;
- forming a first trench resulting from said first interconnect trench being increased in width and a second trench resulting from said second interconnect trench being increased in width, by carrying out isotropic etching;
- and
- forming a first insulating film within said first trench and a second insulating film within said second trench by filling an insulating material in said first trench and said second trench.
A method of manufacturing a semiconductor device, comprising:
- forming a first interconnect trench and a second interconnect trench adjacent to the first interconnect trench in an interlayer insulating film;
- forming a first conductive film on said interlayer insulating film such that said first interconnect trench and said second interconnect trench are filled with the first conductive film;
- removing a portion of said first conductive film external to said first interconnect trench and said second interconnect trench, an upper portion of said first conductive film within said first interconnect trench, and an upper portion of said first conductive film within said second interconnect trench, thereby forming a first interconnect and a space on the first interconnect within said first interconnect trench, and a second interconnect and a space on the second interconnect within said second interconnect trench;
- forming a first mask trench resulting from said first interconnect trench being increased in width and a second mask trench resulting from said second interconnect trench being increased in width, by carrying out isotropic etching;
- forming a masking insulating film on said interlayer insulating film such that said first mask trench and said second mask trench are filled with the masking insulating film;
- removing a portion of said masking insulating film external to said first mask trench and said second mask trench, thereby forming a first mask insulating film within said first mask trench and a second mask insulating film within said second mask trench;
- forming a hole passing through between said first interconnect and said second interconnect and penetrating said interlayer insulating film self-alignedly with said first mask insulating film and said second mask insulating film, by carrying out anisotropic etching utilizing said first and second mask insulating films as masks;
- forming a second conductive film such that said hole is filled with the second conductive film;
- and
- removing a portion of said second conductive film external to said hole, thereby forming a plug within said hole.
A method of manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a first interconnect trench and a second interconnect trench adjacent to the first interconnect trench in the interlayer insulating film;
- filling a first conductive film in the first interconnect trench and the second interconnect trench;
- removing an upper portion of the first conductive film in the first interconnect trench and the second interconnect trench;
- forming a first mask trench and a second mask trench by removing the upper portion of the interlayer insulation film over the first conductive film, wherein both width of the first mask trench and the second mask trench are larger than a width of the first conductive film;
- filling a masking insulating film in the first mask trench and the second mask trench;
- forming a hole between the first interconnect trench and the second interconnect trench by using the masking insulating film as an etching mask;
- and
- forming a plug by filling the hole with a second conductive film.
Dependencies are inferred from the claim text.