Linear Cluster Deposition System

A linear cluster deposition system comprising:

• a) a plurality of reaction chambers positioned in a linear horizontal arrangement, each of the plurality of reaction chambers having a process gas input port coupled to a mass flow controller, an exhaust gas output port, and a substrate transfer port;
• b) at least two deposition monitors that monitor films grown in at least two of the plurality of reaction chambers;
• c) a first and second reactant gas manifold each of the first and second reactant gas manifold having a plurality of process gas outputs, a respective one the plurality of process gas outputs of each of the first and second reactant gas manifold being coupled to a respective process gas input port of each of the plurality of reaction chambers;
• d) an exhaust gas manifold having a plurality of exhaust gas inputs, a respective exhaust gas input being coupled to a respective exhaust gas output port of the plurality of reaction chambers;
• e) a substrate transport vehicle that transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of the substrate transfer ports of each of the plurality of reaction chambers;
• and
• f) a processor having at least two sensor inputs, a respective one of the at least two sensor inputs being electrically coupled to an output of a respective one of the at least two deposition monitors, and having at least two outputs, a respective one of the at least two outputs being coupled to a control input of a respective one of the mass flow controllers, the processor generating control signals at the at least two outputs that adjust a process gas flow rate of the respective mass flow controller to achieve substantially the same process conditions in at least two of the plurality of reaction chambers.

A method of simultaneous depositing material in a plurality of reaction chambers, the method comprising:

• a) providing a plurality of reaction chambers positioned in a linear horizontal arrangement;
• b) flowing reactant gas from at least two common reactant gas manifolds into each of the plurality of reaction chambers;
• c) exhausting reactant gas and reaction products from the plurality of reaction chambers into a common exhaust gas manifold;
• d) adjusting at least one processing parameter or reaction chamber parameter in at least one of the plurality of reaction chambers to achieve at least one film parameter that is substantially the same in at least two of the plurality of reaction chambers;
• and
• e) transporting at least one of a substrate and a substrate carrier that supports at least one substrate into and out of each of the plurality of reaction chambers for simultaneous deposition.