Multiple-Gate Transistors with Reverse T-Shaped Fins
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Shyue Lai, Jing-Cheng Lin
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Abstract
A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric.
Claims16
A method of forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- forming a first insulation region and a second insulation region in the semiconductor substrate and facing each other;
- forming an epitaxial semiconductor region having a reversed T-shape and comprising:
- a horizontal plate comprising a bottom portion between and adjoining the first insulation region and the second insulation region, wherein a bottom surface of the horizontal plate contacts the semiconductor substrate;
- and
- a fin over and adjoining the horizontal plate;
- forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin;
- and
- forming a gate electrode over the gate dielectric.
A method of forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- forming a first shallow trench isolation (STI) region and a second STI region in the semiconductor substrate, wherein the semiconductor substrate comprises a portion horizontally between and adjoining the first STI region and the second STI region;
- etching the portion of the semiconductor substrate to form a recess, wherein the recess has a bottom lower than a top surface of the first STI region and no lower than a bottom surface of the first STI region, and wherein sidewalls of the first STI region and the second STI regions are exposed through the recess;
- epitaxially growing a germanium-containing region in the recess;
- etching only an upper portion of the germanium-containing region, so that remaining portions of the germanium-containing region have a reversed T-shape comprising a horizontal plate and a fin over the horizontal plate;
- forming a gate dielectric on a top surface and covering at least top portions of sidewalls of the fin;
- and
- forming a gate electrode over the gate dielectric.
Dependencies are inferred from the claim text.