Compound semiconductor deposition method and apparatus

A compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, comprising:

• irradiating propagation light of a smaller energy than an excitation energy computed from an element ratio of the compound semiconductor onto the substrate while depositing the compound semiconductor on the substrate;
• and
• generating near-field light based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate, forming new vibrational levels for the compound semiconductor in multiple stages based on the generated near-field light, and exciting a component in the compound semiconductor which corresponds to the excitation energy with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than an energy of the propagation light, thereby desorbing the component.

A compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate by promoting a photochemical reaction through irradiation of propagation light for deposition to a gas supplied into a reaction chamber, the method comprising:

• irradiating propagation light for desorption of a smaller energy than an excitation energy computed from an element ratio of the compound semiconductor onto the substrate while depositing the compound semiconductor on the substrate;
• and
• generating near-field light based on the irradiated propagation light for deposition from fine particles of the compound semiconductor deposited on the substrate, forming new vibrational levels for the compound semiconductor in multiple stages based on the generated near-field light, and exciting a component in the compound semiconductor which corresponds to the excitation energy with the propagation light for desorption through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than an energy of the propagation light for desorption, thereby desorbing the component.

A compound semiconductor deposition apparatus for depositing a compound semiconductor of a ternary or higher system on a substrate, comprising:

• irradiating propagation light of a smaller energy than an excitation energy computed from an element ratio of the compound semiconductor onto the substrate while depositing the compound semiconductor on the substrate;
• and
• exciting a component in the compound semiconductor which corresponds to an excitation energy equal to or smaller than an energy of the propagation light with the propagation light, thereby desorbing the component.

A compound semiconductor deposition apparatus for depositing a compound semiconductor of a ternary or higher system on a substrate, comprising:

• irradiating propagation light of a smaller energy than an excitation energy computed from an element ratio of the compound semiconductor onto the substrate while depositing the compound semiconductor on the substrate;
• and
• generating near-field light based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate, forms new vibrational levels for the compound semiconductor in multiple stages based on the generated near-field light, and exciting a component in the compound semiconductor which corresponds to the excitation energy with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than an energy of the propagation light, thereby desorbing the component.

A compound semiconductor deposition apparatus for depositing a compound semiconductor of a ternary or higher system on a substrate by promoting a photochemical reaction through irradiation of propagation light for deposition to a gas supplied into a reaction chamber, the apparatus comprising:

• irradiating propagation light for desorption of a smaller energy than an excitation energy computed from an element ratio of the compound semiconductor onto the substrate while depositing the compound semiconductor on the substrate;
• and
• generating near-field light based on the irradiated propagation light for deposition from fine particles of the compound semiconductor deposited on the substrate, forms new vibrational levels for the compound semiconductor in multiple stages based on the generated near-field light, and exciting a component in the compound semiconductor which corresponds to the excitation energy with the propagation light for desorption through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than an energy of the propagation light for desorption, thereby desorbing the component.