Method and structure for fabricating solar cells using a thick layer transfer process
AssigneeSilicon Genesis Corporation
InventorFRANCOIS J. HENLEY
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Abstract
A method includes providing a donor substrate comprising single crystal silicon and having a surface region, a cleave region, and a thickness of material to be removed between the surface region and the cleave region. The method also includes introducing through the surface region a plurality of hydrogen particles within a vicinity of the cleave region using a high energy implantation process. The method further includes applying compressional energy to cleave the semiconductor substrate and remove the thickness of material from the donor substrate.
Claims23
1-70. (canceled)
A method comprising:
- providing a donor substrate comprising single crystal silicon and having a surface region, a cleave region, and a thickness of material to be removed between the surface region and the cleave region;
- introducing through the surface region a plurality of hydrogen particles within a vicinity of the cleave region using a high energy implantation process;
- and
- applying compressional energy to cleave the semiconductor substrate and remove the thickness of material from the donor substrate.
A method as in claim 7 wherein the removed thickness of material is between about 20-50 μm in thickness.
Dependencies are inferred from the claim text.