Fabrication of substrates with a useful layer of monocrystalline semiconductor material
AssigneeSoitec
InventorsFabrice Letertre, Bruno Ghyselen, Olivier Rayssac, Pierre Rayssac, Gisele Rayssac
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Abstract
The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
Claims19
A method for fabricating a semiconductor substrate, comprising:
- providing an intermediate assembly comprising a support substrate and a nucleation layer as an exposed layer of the support substrate;
- providing at least one layer of a semiconductor material upon the nucleation layer of the intermediate assembly;
- bonding a target substrate to the deposited semiconductor material to form a support assembly comprising the target substrate, the deposited semiconductor material, and the intermediate assembly;
- and
- processing the support assembly to remove at least the support substrate to provide a semiconductor substrate comprising the at least one layer of semiconductor material on the target substrate.
Dependencies are inferred from the claim text.