Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer containing at least yttrium oxide over a silicon substrate;
• applying heat treatment to the first insulating layer;
• forming an embrittlement layer having a porous structure in the silicon substrate by implanting ion containing hydrogen into the silicon substrate;
• processing the first insulating layer to form an insulating film of a storage capacitor portion;
• forming a lower electrode of the storage capacitor portion over the silicon substrate and the insulating film of the storage capacitor portion;
• forming a second insulating layer over the silicon substrate and the insulating film and the lower electrode of the storage capacitor portion;
• forming a third insulating layer over the second insulating layer;
• bonding the silicon substrate to a support substrate with the second and third insulating layers interposed therebetween;
• separating a part of the support substrate along the embrittlement layer so that the insulating film of the storage capacitor portion, the second insulating layer, and a single crystal silicon layer are formed over the support substrate;
• etching the single crystal silicon layer to form at least first and second island-like single crystal silicon layers, the first island-like single crystal layer formed over the insulating film of the storage capacitor portion;
• forming a gate insulating film and a gate electrode over the second island-like single crystal silicon layer;
• adding an impurity element imparting one conductivity type to the first and second island-like single crystal silicon layers using the gate electrode as a mask to form impurity regions that serve as a source region and a drain region;
• etching the first island-like single crystal silicon layer to expose a part of the insulating film of the storage capacitor portion;
• forming an interlayer insulating film over the first and second island-like single crystal silicon layers, the gate insulating film, and the gate electrode;
• and
• forming a wiring over the interlayer insulating film so as to be electrically connected to the impurity regions and to be in contact with the insulating film of the storage capacitor portion.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer containing at least yttrium oxide over a silicon substrate;
• applying heat treatment to the first insulating layer;
• forming an embrittlement layer having a porous structure in the silicon substrate by implanting ion containing hydrogen into the silicon substrate;
• processing the first insulating layer to form an insulating film of a storage capacitor portion;
• forming a lower electrode of the storage capacitor portion over the silicon substrate and the insulating film of the storage capacitor portion;
• forming a second insulating layer over the silicon substrate and the insulating film and the lower electrode of the storage capacitor portion;
• forming a third insulating layer over the second insulating layer;
• bonding the silicon substrate to a support substrate with the second and third insulating layers interposed therebetween;
• separating a part of the support substrate along the embrittlement layer so that the insulating film of the storage capacitor portion, the second insulating layer, and a single crystal silicon layer are formed over the support substrate;
• etching the single crystal silicon layer to form at least first and second island-like single crystal silicon layers, the first island-like single crystal silicon layer formed over the insulating film of the storage capacitor portion;
• forming a gate insulating film and a gate electrode over the second island-like single crystal silicon layer;
• adding an impurity element imparting one conductivity type to the first and second island-like single crystal silicon layers using the gate electrode as a mask to form impurity regions;
• forming an interlayer insulating film over the first and second island-like single crystal silicon layers, the gate insulating film, and the gate electrode;
• and
• forming a wiring over the interlayer insulating film so as to be connected to the impurity regions of the first and second island-like single crystal silicon layers.