Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsKatsuaki Ookoshi, Masatoshi Nishikawa, Yosuke Shimamune
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a gate electrode on a semiconductor substrate; forming a dopant implantation area in the semiconductor substrate by implanting a dopant in the semiconductor substrate, using the gate electrode as a mask; forming sidewalls on the gate electrode; forming a first recess by etching the semiconductor substrate, using the gate electrode and the sidewalls as a mask; forming a second recess by removing the dopant implantation area positioned below the sidewalls; and forming a source area and a drain area by causing a semiconductor material to grow in the first recess and the second recess.
Claims8
A method of manufacturing a semiconductor device, the method comprising:
- forming a gate electrode above a semiconductor substrate;
- forming a dopant implantation area in the semiconductor substrate by implanting a dopant in the semiconductor substrate, using the gate electrode as a mask;
- forming sidewalls on the gate electrode;
- forming a first recess by etching the semiconductor substrate, using the gate electrode and the sidewalls as a mask;
- forming a second recess by removing the dopant implantation area positioned below the sidewalls;
- and
- forming a source area and a drain area by causing a semiconductor material to grow in the first recess and the second recess.
Dependencies are inferred from the claim text.