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US 2012/0058591 A1Published application
Method of fabricating epitaxial structures
AssigneeMasimo Semiconductor, Inc.
InventorBrad M. Siskavich
Life of this patent
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Abstract
A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.
Claims12
A method of fabricating epitaxial structures comprising:
- applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate;
- flipping the substrate;
- growing a second etch stop and at least one epitaxial layer on a second side of said substrate;
- applying a carrier medium to the ultimate epitaxial layer on each side;
- dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures;
- removing any residual substrate and
- removing the etch stop.
4 more elements
Dependencies are inferred from the claim text.