Device and method for simultaneously microstructuring and doping semiconductor substrates
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsKuno Mayer, Ingo Krossing, Carsten Knapp, Filip Granek, Matthias Mesec, Andreas Rodofili
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Abstract
The invention relates to a device and a method for simultaneous microstructuring and doping of semiconductor substrates with boron, in which the semiconductor substrate is treated with a laser beam coupled into a liquid jet, the liquid jet comprising at least one boron compound. The method according to the invention is used in the field of solar cell technology and also in other fields of semiconductor technology in which a locally delimited boron doping is important.
Claims25
A method for simultaneous microstructuring and doping of semiconductor substrates, in which a liquid jet which is directed towards the substrate surface and comprises at least one boron compound as dopant is guided over the regions of the substrate to be structured, a laser beam being coupled into the liquid jet, as a result of which the substrate surface is heated locally by the laser beam and consequently is structured at least in regions and, in the structured regions, diffusion of boron atoms into the semiconductor substrate is effected.
Boron compound of formula III:
Boron compound of formula IV:
Dependencies are inferred from the claim text.