Loading patent…
AssigneePanasonic Corporation
InventorsShunji YOSHIDA, Ryou KATO, Toshiya YOKOGAWA
Estimating the term…
InyGa1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of InxGa1-xN (0<x<1) layers whose emission wavelengths are equal among the InyGa1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an InxGa1-xN layer is grown.
A method of fabricating a gallium nitride-based compound semiconductor light-emitting device, including forming a gallium nitride-based compound semiconductor layer whose principal surface is a non-polar plane or a semi-polar plane by metalorganic chemical vapor deposition, where parameters that define growth conditions of the metalorganic chemical vapor deposition include a pressure, a growth rate, a growth temperature, and an In supply mole fraction that is a mole fraction of an In source gas contained in a supplied Group III source gas, a curve that represents a relationship between the growth temperature and the In supply mole fraction for formation of an InxGa1-xN (0<x<1) layer of an identical emission wavelength in a case where the pressure and the growth rate are constant having a saturation point which exists between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates, the method comprising the steps of:
A gallium nitride-based compound semiconductor layer growth condition determination method for determining a condition for growing a gallium nitride-based compound semiconductor layer whose principal surface is a non-polar plane or a semi-polar plane by metalorganic chemical vapor deposition, where parameters that define growth conditions of the metalorganic chemical vapor deposition include a pressure, a growth rate, a growth temperature, and an In supply mole fraction that is a mole fraction of an In source gas contained in a supplied Group III source gas, the method comprising the steps of:
Dependencies are inferred from the claim text.