Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
AssigneeFUJIFILM Corporation
InventorsHideaki TSUBAKI, Shinichi KANNA
Life of this patent
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Abstract
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
Claims45
A pattern forming method, comprising:
- forming a resist film by applying, to a substrate, a resin composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer consisting essentially of an organic solvent decreases under an action of an acid, the resin having a lactone group and a monocyclic or polycyclic alicyclic hydrocarbon structure and consisting essentially of (meth)acrylate-based repeating units, wherein the resin composition is capable of forming a resist film of which solubility in the positive developer increases and solubility in the negative developer decreases upon irradiation with actinic rays or radiation;
- exposing the resist film;
- and
- developing the resist film after the exposing with the negative developer consisting essentially of an organic solvent.
A pattern forming method, comprising:
- forming a resist film by applying, to a substrate, a resin composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer consisting essentially of an organic solvent decreases under an action of an acid, the resin having a lactone group and a monocyclic or polycyclic alicyclic hydrocarbon structure and containing essentially no fluorine or silicon atom, wherein the resin composition is capable of forming a resist film of which solubility in the positive developer increases and solubility in the negative developer decreases upon irradiation with actinic rays or radiation;
- exposing the resist film;
- and
- developing the resist film after the exposing with the negative developer consisting essentially of an organic solvent.
A pattern forming method, comprising:
- forming a resist film by applying, to a substrate, a resin composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer consisting essentially of an organic solvent decreases under an action of an acid, the resin having a lactone group that does not essentially decompose under an action of an acid and a monocyclic or polycyclic alicyclic hydrocarbon structure, wherein the resin composition is capable of forming a resist film of which solubility in the positive developer increases and solubility in the negative developer decreases upon irradiation with actinic rays or radiation;
- exposing the resist film;
- and
- developing the resist film after the exposing with the negative developer consisting essentially of an organic solvent.
Dependencies are inferred from the claim text.