Ion source cleaning in semiconductor processing systems
AssigneeAdvanced Technology Materials, Inc.
InventorsJoseph D. Sweeney, Sharad N. Yedave, Oleg Byl, Robert Kaim, David Eldridge, Lin Feng, Steven E. Bishop, W. Karl Olander, Ying Tang
Life of this patent
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Abstract
Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.
Claims8
A method of controlling the condition of an indirectly heated cathode source in an ion implantation system comprising:
- a) determining power usage for the indirectly heated cathode source by measuring cathode bias power at a predetermined time b) comparing the power usage at the predetermined time to initial power;
- and c) taking corrective actions (i) or (ii) to control the condition of the indirectly heated cathode in response to the comparing whereby
- (i) etching the indirectly heated cathode if the power usage at the predetermined time is higher than the initial power;
- or
- (ii) regrowing the indirectly heated cathode if the power usage at the predetermined time is lower than the initial power.
A method of operating an ion implantation system including a cathode in an arc chamber of an ion source, to maintain operating efficiency of the ion source, said method comprising contacting the cathode with a tungsten reagent under conditions selected from the group consisting of:
- (a) conditions effecting deposition of tungsten on the cathode;
- and
- (b) conditions effecting etching of deposited material from the cathode, and said contacting is carried out according to a schedule maintaining power usage of said cathode within predetermined limits.
A method of cleaning one or more components of an ion implantation system for at least partial removal of ionization-related deposits form said one or more components, said method comprising flowing a cleaning gas through the system, under conditions selected from the group consisting of:
- (a) conditions effecting deposition of material on the cathode;
- and
- (b) conditions effecting etching of deposited material from the cathode,
- wherein said cleaning gas comprises XeF2 and said cleaning gas is flowed through the system at sufficient intervals to maintain leakage current in operation of the system below a predetermined limit.
Dependencies are inferred from the claim text.