Process for producing polycrystalline silicon
AssigneeWacker Chemie AG
InventorsWalter HAECKL, Karl HESSE, Wilhelm HOEBOLD, Reinhard WOLF
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Abstract
The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.
Claims12
A process for producing polycrystalline silicon, by introducing reaction gases comprising a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in the second reactor.
Granular polycrystalline silicon, comprising less than or equal to 30 ppba of carbon and greater than or equal to 5 ppmw of chlorine.
Polycrystalline silicon comprising less than 1 ppba of carbon.
Dependencies are inferred from the claim text.