Nitride semiconductor light-emitting device
AssigneePanasonic Corporation
InventorsShinji Yoshida, Kenji Orita, Yoshiaki Hasegawa, Atsunori Mochida
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Abstract
A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
Claims7
A nitride semiconductor light-emitting device, comprising:
- a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet;
- and
- a first protection film formed to cover the light-emitting facet of the multilayer semiconductor structure, wherein
- the first protection film is a crystalline film made of a nitride containing aluminum,
- the crystalline film is comprised of a group of single domains,
- the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle, and
- a length of a boundary between the domains per unit area is 7 μm−1 or less.
A nitride semiconductor light-emitting device, comprising:
- a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and
- a first protection film formed to cover the light-emitting facet of the multilayer semiconductor structure, wherein
- the first protection film is a crystalline film made of a nitride containing aluminum,
- the crystalline film is comprised of a group of single domains,
- the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle, and
- part of the plurality of domains which is opposed to a light transmission area of the light-emitting facet has an area larger than an area of the light transmission area.
Dependencies are inferred from the claim text.