Nonvolatile memory device and method of reading the same
AssigneeHynix Semiconductor Inc.
InventorsJung Hwan LEE, Seong Je PARK
Life of this patent
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Abstract
A read method of a nonvolatile memory device according to an exemplary embodiment of this disclosure includes precharging bit lines coupled to memory cells, performing a first read operation by supplying a first reference voltage to the memory cells in order to determine the data stored in the memory cells, precharging bit lines coupled to undetermined memory cells whose data has not been determined by the first read operation, and performing a second read operation by supplying a second reference voltage to the memory cells in order to determine data stored in the undetermined memory cells.
Claims14
A read method of a nonvolatile memory device, the method comprising:
- precharging bit lines coupled to memory cells;
- performing a first read operation by supplying a first reference voltage to the memory cells in order to determine data stored in the memory cells;
- precharging bit lines coupled to undetermined memory cells whose data has not been determined by the first read operation;
- and
- performing a second read operation by supplying a second reference voltage to the memory cells in order to determine data stored in the undetermined memory cells.
A read method of a nonvolatile memory device, the method comprising:
- precharging bit lines coupled to memory cells which are classified into first to fourth memory cells, each having a different threshold voltage;
- performing a first read operation for distinguishing the first and the second memory cells from the third and the fourth memory cells;
- after precharging the bit lines of the memory cells, performing a second read operation for distinguishing the first memory cell from the second memory cell;
- and
- after precharging bit lines coupled to the third and the fourth memory cells, performing a third read operation for distinguishing the third memory cell from the fourth memory cell.
A read method of a nonvolatile memory device, the method comprising:
- precharging bit lines coupled to memory cells which are classified into first to eighth memory cells, each having a different threshold voltage, and then performing a first read operation for distinguishing the first to fourth memory cells from the fifth to eighth memory cells;
- after precharging the bit lines of the memory cells, performing a second read operation for distinguishing the first and the second memory cells from the third and the fourth memory cells;
- after precharging bit lines coupled to the fifth to eighth memory cells, performing a third read operation for distinguishing the fifth and the sixth memory cells from the seventh and eighth memory cells;
- after precharging the bit lines of the memory cells, performing a fourth read operation for distinguishing the first memory cell from the second memory cell;
- after precharging bit lines coupled to the third and the eighth memory cells, performing a fifth read operation for distinguishing the third memory cell from the fourth memory cell;
- after precharging the bit lines of the fifth to the eighth memory cells, performing a sixth read operation for distinguishing the fifth memory cell from the sixth memory cell;
- and
- after precharging bit lines coupled to the seventh and the eighth memory cells, performing a seventh read operation for distinguishing the seventh memory cell from the eighth memory cell.
A nonvolatile memory device, comprising:
- a memory block comprising memory cells;
- a plurality of page buffers coupled to respective bit lines corresponding to the memory cells and configured to perform a read operation for determining data stored in the memory cells;
- and
- a control circuit configured to control the page buffers so that the page buffers perform a first read operation by using a first reference voltage as a read voltage in order to determine the data of the memory cells after precharging a relevant bit line, precharge bit lines coupled to undetermined memory cells whose data has not been determined by the first read operation, and then perform a second read operation.
Dependencies are inferred from the claim text.