Memory element and memory device

A memory device, comprising:

• a memory element that maintains information through a magnetization state of a magnetic material;
• and
• two kinds of interconnects that intersect each other,
• wherein the memory element includes a memory layer that maintains information through a magnetization state of a magnetic material, a magnetization-fixed layer with magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer,
• the storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion that occurs according to a current flowing in a lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer,
• the memory layer includes an alloy region containing at least one of Fe and Co,
• a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than an saturated magnetization amount of the memory layer,
• the memory element is disposed between the two kinds of interconnects, and
• a current flows to the memory element in the lamination direction through the two kinds of interconnects, and according to this, spin torque magnetization inversion occurs.