High Density Non-Volatile Information StorageHigh Density Non-Volatile information Storage

Abstract

The present invention provides for a composition comprising a nanostructure comprising a semiconductor component and a metallic component, with the proviso that when the semiconductor component is Ge the metallic component is not Te. The nanostructure can be in one of two types of structures: (1) a segregated structure, and (2) a mixed structure. In the segregated structure, the semiconductor component and the metallic component are spatially separate, such as in a lobe-lobe structure, poly-lobe structure, or a core-shell structure. In some embodiments, the lobe-lobe structure comprises a metallic component lobe and a semiconductor component lobe. The composition can be used in a memory device.

Dependencies are inferred from the claim text.