Composite bulk acoustic wave resonator
OwnerWei Pang, Hao Zhanginventors
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Abstract
In one aspect of the invention, the acoustic wave resonator includes a resonator structure having a first electrode, a piezoelectric layer formed on the first electrode, and a second electrode formed on the piezoelectric layer, and a composite layered structure associated with the resonator structure such that the immunity of the acoustic wave resonator to environmental change and aging effects is improved, the trimming sensitivity is substantially minimized, and/or dispersion characteristics of the acoustic wave resonator is optimized.
Claims31
An acoustic wave resonator comprising:
- (a) a substrate defining an air cavity;
- (b) a first pair of low and high impedance layers formed on the substrate and located over the air cavity;
- (c) a seed layer formed on the first pair of low and high impedance layers;
- (d) a first electrode formed on the seed layer;
- (e) a piezoelectric layer formed on the first electrode;
- (f) a second electrode formed on the piezoelectric layer;
- (g) a second pair of low and high impedance layers formed on the second electrode;
- and
- (h) a passivation layer formed on the second pair of low and high impedance layers.
An acoustic wave resonator comprising:
- (a) a substrate;
- (b) a first electrode supported by the substrate;
- (c) a piezoelectric layer formed on the first electrode;
- (d) a second electrode formed on the piezoelectric layer;
- (e) a pair of low and high impedance layers formed in contact with one of the first and second electrodes;
- and
- (f) a passivation layer formed on the second electrode if the pair of low and high impedance layers is in contact with the first electrode, or on the pair of low and high impedance layers if the pair of low and high impedance layers is in contact with the second electrode.
An acoustic wave resonator comprising:
- (a) a substrate;
- (b) a first electrode supported by the substrate;
- (c) a piezoelectric layer formed on the first electrode;
- (d) a second electrode formed on the piezoelectric layer;
- and
- (e) a passivation layer formed on the second electrode,
- wherein at least one of the first and second electrodes comprises a pair of low and high impedance layers.
An acoustic wave resonator fabricated on a substrate, comprising:
- (a) a seed layer;
- (b) a resonator structure having a first electrode formed on the seed layer, a piezoelectric layer formed on the first electrode, and a second electrode formed on the piezoelectric layer;
- and
- (c) a composite layered structure associated with the resonator structure such that the immunity of the acoustic wave resonator to environmental change and aging effects is improved, the trimming sensitivity is substantially minimized, or dispersion characteristics of the acoustic wave resonator is optimized.
Dependencies are inferred from the claim text.