Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device
AssigneeHitachi Cable, Ltd.
InventorsFumimasa Horikiri, Kenji Shibata, Kazufumi Suenaga, Kazutoshi Watanabe, Akira Nomoto
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Abstract
A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
Claims12
A method for manufacturing a piezoelectric film wafer, comprising:
- an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, the piezoelectric film comprising an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7);
- and
- a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma.
A method for manufacturing a piezoelectric film element, comprising:
- a step of forming a bottom electrode on a substrate;
- a step of forming a piezoelectric film comprising an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7) on the substrate;
- and
- a step of carrying out microprocessing on the piezoelectric film by dry etching using a gas containing Ar, the microprocessing step comprising processing the piezoelectric film to have a taper shape which is gradually enlarged toward a surface of the substrate at an etching cross section of the piezoelectric film by stopping processing at the bottom electrode by detecting an attenuation change in an emission peak intensity of a Na emission spectrum within a range from 586 nm to 590 nm in ion plasma.
A piezoelectric film element, comprising:
- a substrate;
- and
- a piezoelectric film comprising an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film comprising an etching cross section having a tapered inclined portion which is enlarged toward the outside.
A piezoelectric film device, comprising:
- a substrate;
- a piezoelectric film comprising an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film comprising an etching cross section having a tapered inclined portion which is enlarged toward the outside;
- a lower electrode provided between the substrate and the piezoelectric film;
- an upper electrode provided on the piezoelectric film;
- and
- a voltage applying unit or a voltage detecting unit connected to the upper and lower electrodes.
Dependencies are inferred from the claim text.