Semiconductor structure and method for manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
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Abstract
The application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises: a semiconductor substrate comprising a first surface and a second surface opposite to each other; and a silicon via formed through the semiconductor substrate, wherein the silicon via comprises a first via formed through the first surface; and a second via formed through the second surface and electrically connected with the first via, wherein the first and second vias are formed individually. Embodiments of the invention are applicable to the manufacture of a 3D integrated circuit.
Claims16
A semiconductor structure, comprising:
- a semiconductor substrate comprising a first surface and a second surface opposite to each other;
- and
- a silicon via formed through the semiconductor substrate,
- wherein the silicon via comprises a first via formed through the first surface and a second via formed through the second surface and electrically connected with the first via, and the first and second vias are formed individually.
A method for manufacturing a semiconductor structure, comprising:
- providing a semiconductor substrate comprising a first surface and a second surface opposite to each other;
- and
- forming a silicon via through the semiconductor substrate, the formation of the silicon via comprising forming a first via through the first surface and forming a second via through the second surface,
- wherein the first via is electrically connected with the second via.
Dependencies are inferred from the claim text.