Semiconductor device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo MIGITA, Hirokazu EZAWA, Soichi YAMASHITA, Koro NAGAMINE, Masahiro MIYATA, Tatsuo SHIOTSUKI, Kiyoshi MURANISHI
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Abstract
According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.
Claims20
A semiconductor device comprising:
- a semiconductor substrate on which a wire and a pad electrode are formed;
- a metal film formed over the semiconductor substrate;
- a surface modifying layer formed on a surface layer of the metal film;
- and
- a redistribution trace formed on the metal film via the surface modifying layer.
A manufacturing method of a semiconductor device comprising:
- forming a metal film over a semiconductor substrate on which a wire and a pad electrode are formed;
- forming resist patterns, whose absorbance with respect to light having a wavelength of 365 nm that reaches an interface with the metal film is 80% or less, on the metal film;
- forming a redistribution trace embedded between the resist patterns on the metal film;
- and
- removing the resist patterns from the metal film after forming the redistribution trace.
A manufacturing method of a semiconductor device comprising:
- forming a metal film over a semiconductor substrate on which a wire and a pad electrode are formed;
- forming resist patterns, whose solubility at a time of development is 1 μm/min or less, on the metal film;
- forming a redistribution trace embedded between the resist patterns on the metal film;
- and
- removing the resist patterns from the metal film after forming the redistribution trace.
A manufacturing method of a semiconductor device comprising:
- forming a metal film over a semiconductor substrate on which a wire and a pad electrode are formed;
- forming a surface modifying layer on a surface layer of the metal film;
- forming resist patterns over the metal film;
- forming a redistribution trace embedded between the resist patterns over the metal film;
- and
- removing the resist patterns from the metal film after forming the redistribution trace.
Dependencies are inferred from the claim text.