Epitaxial silicon wafer and production method thereof
AssigneeSumco Corporation
InventorsTakayuki Kihara, Kazushige Takaishi, Yasuyuki Hashimoto
Life of this patent
Estimating the term…
Abstract
Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression.
Claims2
An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer, wherein the epitaxial layer is formed on the silicon wafer for epitaxial growth with a cross-sectional form satisfying the following expression (1):
- ΔBowmv=ΔBowcv*k (1)
- wherein ΔBowmv is a difference between a measured value ΔBowep of the warping of the epitaxial silicon wafer after the epitaxial layer growth and a measured value ΔBowpw of the warping of the silicon wafer for epitaxial growth before the epitaxial layer growth when an epitaxial layer is formed on a flat silicon wafer for epitaxial, and ΔBowcv is a calculated value of the warping of the epitaxial silicon wafer based on a given computation expression, and k=0.5±0.05.
Dependencies are inferred from the claim text.