US 2012/0056306 A1Published application

Multi-stack semiconductor device

AssigneeSun Well Solar Corporation

InventorsChang-Shiang YANG, Ke-Hsuan Liu, Chih-hsien Chien

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Abstract

A multi-stack semiconductor device comprises: a substrate; a first conductive layer, a first group of the semiconductor material layers and a second group of the semiconductor material layers. The first conductive layer is formed on the substrate scribed by laser on the bottom of the first conductive layer to form a plurality of the first scribe lines. The first group of the semiconductor material layers is formed on the first conductive layer, and the second group of the semiconductor material layers is formed on the first group of the semiconductor material layers. The first group of the semiconductor material layers and the second group of the semiconductor material layers are simultaneously scribed by laser on bottom of the first group of the semiconductor material layers to form a plurality of the second scribe lines. Each second scribe line is comprised of a plurality of the second pores. The second conductive layer is formed on the second group of the semiconductor material layers and is scribe by laser on the bottom of the first group of the semiconductor material layers to form a plurality of the third scribe lines. The second pores are shortened for shortening the horizontal distance of the first scribe lines and the second scribe lines and/or the horizontal distance of the second scribe lines and the third scribe lines.

Claims40

Dependent claims

A multi-stack semiconductor device with an increased effective operation area, the semiconductor device comprising:

a substrate;
a first conductive layer formed on the substrate, the first conductive layer being scribed by laser and the scribing being on the bottom of the first conductive layer to form a plurality of the first scribe lines whereby part of the first conductive layer is removed and the substrate damage is minimized, each first scribe line being comprised of a plurality of the first pores, and each first pore partially overlapping with the neighboring first pore;
a first group of the semiconductor material layers and a second group of the semiconductor material layers, the first group of the semiconductor material layers being comprised of a plurality of the semiconductor material layers and formed on the first conductive layer, the second group of the semiconductor material layers being comprised of a plurality of the semiconductor material layers and formed on the first group of the semiconductor material layers, the first group of the semiconductor material layers and the second group of the semiconductor material layers being simultaneously scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers and part of the second group of the semiconductor material layers are removed and the first conductive layer damage is minimized to form a plurality of the second scribe lines, and each second scribe line being comprised of a plurality of the second pores;
a second conductive layer formed on the second group of the semiconductor material layers, the second conductive layer being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers, part of the second group of the semiconductor material layers and part of the second conductive layer are removed and the first conductive layer damage is minimized to form a plurality of the third scribe lines, each third scribe line being comprised of a plurality of the third pores, and each third pore partially overlapping with the neighboring third pore;
wherein the second pores are shortened for shortening horizontal distance between the first scribe lines and the second scribe lines and/or the horizontal distance between the second scribe lines and the third scribe lines whereby the semiconductor device effective operation area is increased.

2 more elements

A multi-stack semiconductor device with an increased effective operation area, the semiconductor device comprising:

a substrate;
a first conductive layer formed on the substrate, the first conductive layer being scribed by laser and the scribing being on the bottom of the first conductive layer to form a plurality of the first scribe lines whereby part of the first conductive layer is removed and the substrate damage is minimized, each first scribe line being comprised of a plurality of the first pores, and each first pore partially overlapping with the neighboring first pore;
a first group of the semiconductor material layers comprised of a plurality of the semiconductor material layers and formed on the first conductive layer, the first group of the semiconductor material layers being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers is removed and the first conductive layer is minimized to form a plurality of the second A scribe lines, and Each second A scribe line being comprised of a plurality of the second A pores;
a second group of the semiconductor material layers comprised of a plurality of the semiconductor material layers and formed on the first group of the semiconductor material layers, the second group of the semiconductor material layers being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers and part of the second group of the semiconductor material layers are removed and the first conductive layer damage is minimized to form a plurality of the second B scribe lines, Each second B scribe line being comprised of a plurality of the second B pores;
and
a second conductive layer formed on the second group of the semiconductor material layers, the second conductive layer being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers, part of the second group of the semiconductor material layers and part of the second conductive layer are removed and the first conductive layer damage is minimized to form a plurality of the third scribe lines, each third scribe line being comprised of a plurality of the third pores, and each third pore partially overlapping with the neighboring third pore,
wherein the second A pores and/or the second B pores are shortened for shortening the horizontal distance between the first scribe lines and the second A scribe lines, the horizontal distance between the second A scribe lines and the second B scribe lines and/or the horizontal distance between the second B scribe lines and the third scribe lines, whereby the semiconductor device effective operation area is increased.

4 more elements

A multi-stack semiconductor device with an increased effective operation area, the semiconductor device comprising:

a substrate;
a first conductive layer formed on the substrate, the first conductive layer being scribed by laser and the scribing being on the bottom of the first conductive layer to form a plurality of the first scribe lines whereby part of the first conductive layer is removed and the substrate damage is minimized, each first scribe line being comprised of a plurality of the first pores, and each first pore partially overlapping with the neighboring first pore;
a first group of the semiconductor material layers, a second group of the semiconductor material layers and a third group of the semiconductor material layers, the first group of the semiconductor material layers being comprised of a plurality of the semiconductor material layers and formed on the first conductive layer, the second group of the semiconductor material layers being comprised of a plurality of the semiconductor material layers and formed on the first group of the semiconductor material layers, and the third group of the semiconductor material layers being comprised of a plurality of the semiconductor material layers and formed on the second group of the semiconductor material layers, the first group of the semiconductor material layers, the second group of the semiconductor material layers and the third group of the semiconductor material layers being simultaneously scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers, part of the second group of the semiconductor material layers and part of the third group of the semiconductor material layers are removed and the first conductive layer damage is minimized to form a plurality of the second scribe lines, and each second scribe line being comprised of a plurality of the second pores;
a second conductive layer formed on the third group of the semiconductor material layers, the second conductive layer being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers, part of the second group of the semiconductor material layers, part of the third group of the semiconductor material layers and part of the second conductive layer are removed and the first conductive layer damage is minimized to form a plurality of the third scribe lines, each third scribe line being comprised of a plurality of the third pores, and each third pore partially overlapping with the neighboring third pore,
wherein the second pores are shortened for shortening horizontal distance between the first scribe lines and the second scribe lines and/or the horizontal distance between the second scribe lines and the third scribe lines whereby the semiconductor device effective operation area is increased.

2 more elements

A multi-stack semiconductor device with an increased effective operation area, the semiconductor device comprising:

a substrate;
a first conductive layer formed on the substrate, the first conductive layer being scribed by laser and the scribing being on the bottom of the first conductive layer to form a plurality of the first scribe lines whereby part of the first conductive layer is removed and the substrate damage is minimized, each first scribe line being comprised of a plurality of the first pores, and each first pore partially overlapping with the neighboring first pore;
a first group of the semiconductor material layers comprised of a plurality of the semiconductor material layers and formed on the first conductive layer, the first group of the semiconductor material layers being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers is removed and the first conductive layer is minimized to form a plurality of the second A scribe lines, and Each second A scribe line being comprised of a plurality of the second A pores;
a second group of the semiconductor material layers comprised of a plurality of the semiconductor material layers and formed on the first group of the semiconductor material layers, the second group of the semiconductor material layers being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers and part of the second group of the semiconductor material layers are removed and the first conductive layer damage is minimized to form a plurality of the second B scribe lines, Each second B scribe line being comprised of a plurality of the second B pores;
a third group of the semiconductor material layers comprised of a plurality of the semiconductor material layers and formed on the second group of the semiconductor material layers, the third group of the semiconductor material layers being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers, part of the second group of the semiconductor material layers and part of the third group of the semiconductor material layers are removed and the first conductive layer damage is minimized to form a plurality of the second C scribe lines, and each second C scribe line being comprised of a plurality of the second C pores;
and
a second conductive layer formed on the third group of the semiconductor material layers, the second conductive layer being scribed by laser and the scribing being on the bottom of the first group of the semiconductor material layers, whereby part of the first group of the semiconductor material layers, part of the second group of the semiconductor material layers, part of the third group of the semiconductor material layers and part of the second conductive layer are removed and the first conductive layer damage is minimized to form a plurality of the third scribe lines, each third scribe line being comprised of a plurality of the third pores, and each third pore partially overlapping with the neighboring third pore,
wherein the second A pores, the second B pores and/or the second C pores are shortened for shortening the horizontal distance between the first scribe lines and the second A scribe lines, the horizontal distance between the second A scribe lines and the second B scribe lines, the horizontal distance between the second B scribe lines and the second C scribe lines and/or the horizontal distance between the second C scribe lines and the third scribe lines, whereby the semiconductor device effective operation area is increased.

5 more elements

Dependencies are inferred from the claim text.