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US 2012/0056305 A1Published application
Spacer structure for transistor device and method of manufacturing same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Tsung Kuo, Shih-Chang Liu, Chia-Shiung Tsai
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Abstract
The present disclosure provides a bipolar junction transistor (BJT) device and methods for manufacturing the BJT device. In an embodiment, the BJT device includes: a semiconductor substrate having a collector region, and a material layer disposed over the semiconductor layer. The material layer has a trench therein that exposes a portion of the collector region. A base structure, spacers, and emitter structure are disposed within the trench of the material layer. Each spacer has a top width and a bottom width, the top width being substantially equal to the bottom width.
Claims20
A method comprising:
- providing a semiconductor substrate having a collector region;
- forming a first semiconductor layer over the semiconductor substrate;
- forming a first dielectric layer over the first semiconductor layer;
- forming a second semiconductor layer over the first dielectric layer;
- forming a second dielectric layer over the second semiconductor material;
- forming a trench in the second dielectric layer, second semiconductor layer, and first dielectric layer, thereby exposing a portion of the first semiconductor layer;
- forming dummy spacers in the trench;
- thereafter, removing the exposed portion of the first semiconductor layer, thereby extending the trench and exposing a portion of the semiconductor substrate having the collector region;
- thereafter, removing the dummy spacers and the second dielectric layer;
- and
- thereafter, forming a base structure, spacers, and an emitter structure in the trench.
8 more elements
A method comprising:
- providing a semiconductor substrate having a collector region;
- forming a semiconductor layer over the semiconductor substrate;
- forming a material layer over the semiconductor layer;
- forming a trench in the semiconductor layer and material layer, wherein sidewalls of the trench are defined by the semiconductor and material layers and a bottom of the trench is defined by a portion of the semiconductor substrate having the collector region;
- forming a base structure in the trench, wherein the base structure has sidewall portions disposed on the sidewalls of the trench and a bottom portion disposed over the portion of the semiconductor substrate having the collector region;
- forming spacers in the trench, the spacers being disposed on sidewall portions of the base structure, wherein the forming the spacers includes:
- forming a first oxide layer over the base structure using a first deposition process;
- forming a nitride layer over the first oxide layer,
- forming a second oxide layer over the nitride layer using the first deposition process,
- forming a third oxide layer over the second oxide layer using a second deposition process, the second deposition process being different than the first deposition process,
- performing a first etch of the third and second oxide layers,
- performing a second etch of the nitride layer, and
- performing a third etch of the first oxide layer;
- and
- forming an emitter structure in the trench, the emitter structure being disposed adjacent to the spacers and over the bottom portion of the base structure.
12 more elements
A bipolar junction transistor (BJT) comprising:
- a semiconductor substrate having a collector region;
- a material layer including a semiconductor layer disposed over the semiconductor substrate and a dielectric layer disposed over the semiconductor layer, wherein the material layer has a trench therein that exposes a portion of the collector region;
- and
- a base structure, spacers, and emitter structure disposed within the trench of the material layer, wherein:
- the base structure has sidewall portions disposed on sidewalls of the trench and a bottom portion disposed over the exposed portion of the collector region;
- the spacers are disposed adjacent to the sidewall portions of the base structure, each spacer having a top width and a bottom width, the top width being substantially equal to the bottom width, and
- the emitter structure is disposed adjacent to the spacers and over the bottom portion of the base structure.
4 more elements
Dependencies are inferred from the claim text.