Wafer, Fabricating Method Of The Same, And Semiconductor Substrate
AssigneeSamsung Electronics Co., Ltd.
InventorsSun-Ha Hwang, Young-Soo Park, Sam-Jong Choi, Joon-Young Choi, Tae-Hyoung Koo
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Abstract
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
Claims19
A wafer comprising:
- a first substrate layer formed at a first surface;
- a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer;
- and
- an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
A wafer comprising:
- a first substrate layer formed at a first surface on which an active region of an integrated circuit device is formed;
- a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater thickness than the first substrate layer;
- and
- a high-concentration boron layer formed between the first substrate layer and the second substrate layer.
13-19. (canceled)
A wafer comprising:
- an oxygen diffusion protecting layer formed in a substrate having a first surface on which an integrated circuit device is formed, and a second surface opposite to the first surface,
- the substrate having an oxygen concentration that is greater between the oxygen diffusion protecting layer and the second surface of the substrate than between the oxygen diffusion protecting layer and the first surface of the substrate.
Dependencies are inferred from the claim text.