Semiconductor device and method of manufacturing same

A semiconductor device comprising:

• a semiconductor substrate having a first region including a memory cell and a second region including a logic circuit;
• a first insulating layer formed on said semiconductor substrate;
• first and second contact plugs including a first high-melting metal, and formed in said first insulating layer to be electrically connected to said semiconductor substrate, in said first region and whose upper surfaces are exposed from said first insulating layer;
• a second insulating layer formed over said first insulating layer;
• a capacitor having an electrode including a second high-melting metal, and formed in said second insulating layer to be electrically connected to said first contact plug;
• a third insulating layer formed over said second insulating layer;
• a first copper wiring having a first copper interconnection and a first barrier metal layer on a side surface and on a lower surface of said first copper interconnection, and formed in said third insulating layer in said first region;
• a second copper wiring having a second copper interconnection and a second barrier metal layer on a side surface and on a lower surface of said second copper interconnection, and formed in said third insulating layer;
• and
• a plurality of conducting contacts including a third high-melting metal, formed in said first insulating layer, said second insulating layer and said third insulating layer, said plurality of conducting contacts electrically connected to both said second copper wiring and said semiconductor substrate.