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US 2012/0056294 A1Published application
Schottky diodes with dual guard ring regions and associated methods
AssigneeMonolithic Power Systems, Inc.
InventorJi-Hyoung Yoo
Life of this patent
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Abstract
The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact. The guard ring region may comprise an outer guard ring and a plurality of inner guard stripes inside the outer guard ring. And wherein the inner guard stripe has a shallower junction depth than the outer guard ring.
Claims20
A semiconductor device, comprising:
- a semiconductor layer of a first doping type;
- a guard ring region, in the semiconductor layer, wherein the guard ring region is of
- a second doping type, and wherein the guard ring region comprises:
- a first guard ring region;
- and
- a second guard ring region, wherein the first guard ring region encloses the second guard ring region and wherein the second guard ring region has a shallower junction depth than the first guard ring region;
- a Schottky contact, over the guard ring region;
- and
- a cathode contact region, in the semiconductor layer and the cathode contact region having a first doping type, wherein the cathode contact region is outside of the guard ring region.
6 more elements
A Schottky diode, comprising:
- a cathode region;
- an anode region, comprising a metal Schottky contact;
- and
- a guard ring region, wherein the guard ring region comprises an outer guard ring and a plurality of inner guard stripes inside the outer guard ring, and wherein the inner guard stripe has a narrower width than the outer guard ring.
1 more element
A method of manufacturing a Schottky diode, comprising:
- forming a cathode region of a first doping type in a semiconductor layer;
- forming a first guard ring region of a second doping type in the semiconductor layer;
- forming a second guard ring region of a second doping type in the semiconductor layer, wherein the second guard ring is formed with a shallower junction than the first guard ring region, and wherein the second guard ring region is formed inside the first guard ring region;
- and
- forming a metal Schottky contact.
2 more elements
Dependencies are inferred from the claim text.