Semiconductor optical element
AssigneeMitsubishi Electric Corporation
InventorKazuhisa Takagi
Life of this patent
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Abstract
A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
Claims3
1-5. (canceled)
A semiconductor optical element detecting light, the semiconductor optical element comprising a light incident end surface and a waveguide including an absorption layer which includes quantum dots, wherein density of the quantum dots in a resonator direction in a portion of the absorption layer is relatively lower in the vicinity of the light incidence end surface.
7-9. (canceled)
Dependencies are inferred from the claim text.