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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsOlivier MONNET, Guillaume MONTEMONT, Loick VERGER, Marie-Claude GENTET
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A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiation. The device including a first series of at least two collecting electrodes formed on the surface of the semiconductor block, and a second series of at least two non-collecting electrodes formed on a support and separated from the semiconductor block by an insulating layer. During processing, after forming the insulating layer on the support so as to cover the non-collecting electrodes, the block of semiconductor material bearing the collecting electrodes and the support bearing the non-collecting electrodes and the insulating layer are assembled.
A method for manufacturing an ionizing radiation detection device comprising a block (100), referred to as semiconductor block, of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiations, a first series of at least two electrodes (130), referred to as collecting electrodes, in electrical contact with the semiconductor block (100), a second series of at least two electrodes (310), referred to as non-collecting electrodes, separated from the semiconductor block (100) by a layer (500), referred to as insulating layer, of an electrically insulating material,
A manufacturing method according to one of the preceding claims, characterized in that the non-collecting electrodes (310) are formed on the surface of the support (300) using a printed circuit manufacturing method.
A manufacturing method according to one of the preceding claims, characterized in that the insulating layer (500) is formed by deposition of the insulating material in the liquid state on the support (300).
A manufacturing method according to one of the preceding claims, characterized in that the assembly of the semiconductor block and of the support is performed using an adhesive (610).
A manufacturing method according to one of the preceding claims, characterized in that at least one connection component (320, 520) is arranged in the support (300) so as to make that connection component pass fully through the support and has a contact surface flush with the surface (560) of the insulating layer (500) after formation of that layer and in that the assembly is carried out so as to place in electrical contact a collecting electrode (110) and said conducting connection component (320).
A manufacturing method according to the preceding claim, characterized in that the assembly is carried out using a conductive adhesive disposed between a connection zone (120) of said collecting electrode (110) and the contact surface of the connection component (320).
A manufacturing method according to one of the preceding claims, characterized in that the material used to form the insulating layer (500) has a relative permittivity comprised between 5 and 15, and a resistivity comprised between 1011 and 1012 Ω.cm.
A manufacturing method according to the preceding claim, the material used to form the insulating layer being ESL 4909-mod.
A manufacturing method according to one of the preceding claims, characterized in that at least one collecting electrode (110) is of width less than that of a non-collecting electrode (310).
A manufacturing method according to one of the preceding claims, characterized in that it comprises forming at least one non-collecting electrode (310) with at least two widened portions (312) to measure a signal induced by the movements of charge in the semiconductor block (100), and in that the assembly step is carried out so as to place opposite each other a collecting electrode (110) and a space (313) between the two widened portions (312).
A manufacturing method according to one of the preceding claims, the support (300) being of ceramic.
A manufacturing method according to the preceding claim, the support (300) being of alumina.
An ionizing radiation detection device comprising:
An ionizing radiation detection device comprising:
An ionizing radiation detection device comprising:
Dependencies are inferred from the claim text.