Memory element and memory device

A memory device, comprising:

• a memory element that retains information through a magnetization state of a magnetic material;
• and
• two kinds of interconnects that intersect each other,
• wherein the memory element includes a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information, a magnetization-fixed layer that has magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer, an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, and an anti-ferromagnetic layer adjacent to the magnetization-fixed layer at a side opposite to the insulating layer side,
• an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer,
• a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer,
• the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy,
• the memory element is disposed between the two kinds of interconnects, and
• a current flows to the memory element in the lamination direction through the two kinds of interconnects, and thereby a spin-polarized electron is injected to the memory element.