Memory element and memory device

A memory device, comprising:

• a memory element that retains information through a magnetization state of a magnetic material;
• and
• two kinds of interconnects that intersect each other,
• wherein the memory element includes,
• a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information,
• a magnetization-fixed layer that has magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer, and
• an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer,
• an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer,
• a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer,
• the insulating layer is formed of an oxide film, and
• the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer,
• the memory element is disposed between the two kinds of interconnects, and
• a current flows to the memory element in the lamination direction through the two kinds of interconnects, and thereby a spin-polarized electron is injected into the memory element.