Memory element and memory device

A memory device, comprising:

• a memory element that retains information through a magnetization state of a magnetic material;
• and
• two kinds of interconnects that intersect with each other,
• wherein the memory element includes a layered structure including,
• a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information,
• a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer,
• an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic material, and
• a cap layer that is provided at a face side, which is opposite to the insulating layer-side face, of the memory layer,
• an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer,
• a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and
• at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film
• the memory element is disposed between the two kinds of interconnects, and
• a current flows to the memory element in the lamination direction through the two kinds of interconnects, and thereby a spin-polarized electron is injected into the memory element.