Method for Manufacturing Contacts for a Semiconductor Device, and Semiconductor Device Having Such Contacts
OwnerHuical Zhong, Qingqing Lianginventors
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Abstract
A manufacturing method for contacts for a semiconductor device and a semiconductor device having said contacts, said method forms contact structures whose lower part consists of a plurality of contact holes and whose upper part consists of a trench contact, said contact holes having relatively smaller diameters, and the trench contacts having relatively larger contact areas. Thus contact holes with smaller diameters and trench contacts having larger contact areas can be easily connected to the metal layer above them, thereby improving the electrical conductivity of the contacts and improving the overall performances of the device.
Claims18
A method for manufacturing contacts for a semiconductor device, comprising:
- a) providing a semiconductor substrate and a semiconductor device, said device comprising a gate region and source/drain regions;
- b) forming an inter-device dielectric layer on the source/drain regions;
- c) forming a plurality of ordered holes in the inter-device dielectric layer and filling the holes to form contact holes;
- and
- d) forming trench contacts located on top of the contact holes and in the inter-device dielectric layer.
A semiconductor device, which comprises:
- a semiconductor substrate;
- a gate region formed on the semiconductor substrate, source/drain regions formed in the semiconductor substrate on opposite sides of the gate region, and an inter-device dielectric layer formed on the source/drain regions;
- a plurality of ordered contact holes formed in the inter-device dielectric layer;
- and
- trench contacts formed in the inter-device dielectric layer and located on top of the contact holes.
Dependencies are inferred from the claim text.