Semiconductor device
AssigneeElpida Memory, Inc.
InventorMasaki YOSHIMURA
Life of this patent
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Abstract
A semiconductor device of the present invention includes: transistor Tr1 arranged on a semiconductor substrate; transistor Tr2 arranged such that a carrier drift direction thereof viewed on the semiconductor substrate is identical to a carrier drift direction of transistor Tr1; diffusion layer 51c connecting diffusion layers 51a and 51b on carrier supply sides of transistors Tr1 and Tr2; and contact plug 61 that is connected to a surface of diffusion layers 51a and 51b on the carrier supply sides of transistors Tr1 and Tr2 or that is connected to a surface of diffusion layer 51c connecting the diffusion layers to each other, and that supplies diffusion layers 51a and 51b with electricity.
Claims12
A semiconductor device, comprising:
- a first transistor that is arranged on a semiconductor substrate;
- a second transistor that is arranged on the semiconductor substrate, and arranged such that a carrier drift direction thereof viewed on the semiconductor substrate is identical to a carrier drift direction of said first transistor;
- a diffusion layer that is formed on the semiconductor substrate, and connects diffusion layers on carrier supply sides of said first and second transistors to each other;
- and
- a contact plug that is connected to a surface of the diffusion layers on the carrier supply sides of said first and second transistors or that is connected to a surface of the diffusion layer connecting the diffusion layers to each other, and that supplies electricity to the diffusion layers on the carrier supply sides of said first and second transistors.
A semiconductor device, comprising:
- a first transistor that includes a first diffusion layer, a first control electrode and a second diffusion layer sequentially formed in a first direction, the first diffusion layer being a main electrode on a carrier supply side;
- a second transistor that includes a third diffusion layer, a second control electrode and a fourth diffusion layer sequentially formed in the first direction, the third diffusion layer being a main electrode on a carrier supply side;
- a fifth diffusion layer that connects the first and third diffusion layers to each other;
- and
- a contact plug that is connected to at least one of the first, third and fifth diffusion layers, and supplies electricity to the first, third and fifth diffusion layers.
Dependencies are inferred from the claim text.